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Rapid Thermal Dopants Diffusion and Surface Passivation for Silicon Solar Cells Applications

Published online by Cambridge University Press:  10 February 2011

Abdelilah Slaoui
Affiliation:
Laboratoire PHASE, 23 Rue du Loess, F-67037 STRASBOURG, FRANCE
Aziz Lachiq
Affiliation:
Laboratoire PHASE, 23 Rue du Loess, F-67037 STRASBOURG, FRANCE
Laurent Ventura
Affiliation:
Laboratoire PHASE, 23 Rue du Loess, F-67037 STRASBOURG, FRANCE
Jean Claude Muller
Affiliation:
Laboratoire PHASE, 23 Rue du Loess, F-67037 STRASBOURG, FRANCE
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Abstract

Limiting thermal exposure time using Rapid Thermal Processing (RTP) is now emerging as a promising simplified process for manufacturing of terrestrial solar cells in a continuous way. In this work, we present results on simultaneous formation of emitter, back-surface field and surface passivation in a single rapid thermal cycle. Spin-on dopants (SOD) solutions are used as dopant sources. Optimal emitter profiles, low sheet resistances and high gettering effect are reached. The residual SOD film is used as a surface passivation layer. Solar cells with efficiencies in the range 10 – 14 % are obtained depending on temperature and time processing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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