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Rapid Thermal Chemical Vapor Deposition of Nitrogen-Doped Polysilicon for High-Performance and High-Reliability CMOS Technology

Published online by Cambridge University Press:  15 February 2011


S. C. Sun
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
L. S. Wang
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
F. L. Yeh
Affiliation:
Silicon ULSI Nanotechnology Group, Department of Electronics Engineering and Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

Abstract

In this paper, a detailed study is presented for the growth kinetics of rapid thermal chemical vapor deposition (RTCVD) of nitrogen-doped polysilicon using silane and ammonia chemistry. It is found that nitrogen doping has reduced the surface roughness and grain size of the RTCVD polysilicon film. Both the deposition rate and the incubation time of film growth depend strongly on the ammonia to silane flow ratio. We have proposed a novel structure of NICER (Nitrogen Incorporation into CMOS Gate Electrode by in-situ RTCVD). High performance and highly reliable dual gate CMOS can be formed by combining rapid thermal oxidation (RTO) with RTCVD.


Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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Rapid Thermal Chemical Vapor Deposition of Nitrogen-Doped Polysilicon for High-Performance and High-Reliability CMOS Technology
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