No CrossRef data available.
Article contents
Rapid Isothermal Processing of Strained GeSi Layers
Published online by Cambridge University Press: 28 February 2011
Abstract
The effects of high temperature-time thermal cycles on the structural stability of GexSi1−x/Si and Si/GexSi1−x/Si layers are studied, using double-crystal x-ray diffraction. The temperature-time cycles chosen in this study are useful for the fabrication of submicron Si MOSFETs. The electrical characteristics of GeSi/Si p-n heterojunctions as a function of annealing temperature and time are also presented.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991