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Raman Scattering Study of Boron Doped Diamond Synthesized at High Pressure
Published online by Cambridge University Press: 28 February 2011
Abstract
Boron doped diamond synthesized at high pressure was studied using Raman scattering. Shift and broadening of the diamond phonon line was observed and attributed to disorder produced by boron doping. Electronic transitions within boron acceptor states and Fano-type interference between phonons and the electronic continuum have also been observed in the spectra.
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- Copyright © Materials Research Society 1993
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