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Radiation Induced Subsurface Charging in the Buried Oxide Layer in SIMOX

Published online by Cambridge University Press:  01 February 2011

M. A. Stevens-Kalceff
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia. Electron Microscope Unit, University of New South Wales, Sydney, 2052, NSW, Australia.
S. Mickle
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia.
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Abstract

Kelvin Probe Microscopy has been used to characterize the magnitude and spatial distribution of reproducible characteristic residual potential in electron beam irradiated silicon on insulator specimens (SIMOX). Focussed electron beam irradiation produces trapped charge within the insulating buried oxide layer which produces highly localized electric fields. The charging processes are dynamic, localized, and dependent on pre-existing and irradiation induced defect concentrations. The characteristic experimental surface potential distributions are compared with calculated model surface potential distributions. This work demonstrates that proximal probe methods which are usually considered to be surface analysis techniques, can be used to investigate subsurface properties and give insight into subsurface charging processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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2. Stevens-Kalceff, M.A, Appl. Phys. Lett. 9, 3050 (2001).CrossRefGoogle Scholar
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11. Programs HiPhi, MetaMesh, Field Precision, Albuquerque, NM, USA http://www.fieldp.com/ Contact author Google Scholar

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