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Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon

Published online by Cambridge University Press:  28 February 2011

R. Angelucci
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
E. Gabilli
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
R. Lotti
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
P. Negrini
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
M. Servidori
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
S. Solmi
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
M. Anderle
Affiliation:
Divisione di Scienza dei Materiali, IRST - 38050 Povo, Trento (Italy)
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Abstract

Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.

A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

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References

1 Morehead, F.F. and Hogdson, R.T., “Energy Beam-Solid Interaction and Transient Thermal Processing 1984” (Materials Research Society, Pittsburgh PA) 35, 341 (1984)Google Scholar
2 Angelucci, R., Negrini, P. and Solmi, S., Appl.Phys.Lett., in press.Google Scholar
3 Michel, A.E. “Rapid Thermal Processing” (Materials Research Society, Pittsburgh PA) 52, 3 (1986)Google Scholar
4 Servidori, M., Angelucci, R., Cembali, F., Negrini, P., Solmi, S., Zaumseil, P. and Winter, U., J.Appl.Phys., in pressGoogle Scholar
5 Cembali, F., Servidori, M. and Zani, A., Solid-St.Electron 28, 933 (1985)CrossRefGoogle Scholar
6 Meda, L., Cerofolini, G.F. and Ottaviani, G., Proc. of IBMM Int.Conf., Catania (Italy) 1986, Nucl.Instr. and Methods, in press.Google Scholar
7 Oehrlein, G.S., Cohen, S.A. and Sedgwick, T.O., Appl.Phys.Lett. 45, 417 (984)CrossRefGoogle Scholar
8 Angelucci, R., Cembali, F., Negrini, P., Servidori, M. and Solmi, S., to be published.Google Scholar

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