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Quenching Effects in Scanning Tunneling Microscopy Studies of Epitaxial Growth
Published online by Cambridge University Press: 10 February 2011
Abstract
The experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.
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- Copyright © Materials Research Society 2000