Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-77ffc5d9c7-866w8 Total loading time: 0.299 Render date: 2021-04-22T22:20:52.823Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing

Published online by Cambridge University Press:  25 February 2011

Sergio A. Ajuria  and
Rafael Reif
Sergio A. Ajuria
Affiliation:
Department of Materials Science and Engineering
Rafael Reif
Affiliation:
Department of Electrical Engineering & Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Polysilicon/silicon interfacial oxides are shown by cross-sectional Transmission Electron Microscopy studies to agglomerate upon annealing. In addition to presenting highlights of microscopy results, we report on electrical characterization data obtained from Cross-Bridge Kelvin Resistors. Resistor data not only support a model for agglomeration proven on microscopy data, but also allow for a quantitative macroscopic understanding of the agglomeration of polysilicon/silicon interfacial oxides over a wide range of times and temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 107
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

[1] Graul, J., Glasl, A., Murrmann, H., IEEE J. Solid-State Circuits, SC–11, 491–495 (1976).CrossRefGoogle Scholar
[2] Ning, T.H., Isaac, R.D., IEEE Trans. Electron Devices, ED–S7, 2051 (1980).CrossRefGoogle Scholar
[3] Potyraj, P.A., Chen, D-L, Hatalis, M.K., Greve, D.W., IEEE Trans. Electron Devices, ED–35(8), 1334–1343 (1988).CrossRefGoogle Scholar
[4] Crabbe, E.F., Hoyt, J.L., Pease, R.F.W., Gibbons, J.F., Materials Research Society Symposium Proceedings, V. 106, 247 (1988).CrossRefGoogle Scholar
[5] Bravman, J.C., Patton, G.L., Plummer, J.D., J. Appl. Phys., 57(8), 2779–2782 (1985).CrossRefGoogle Scholar
[6] Wolstenholme, G., Jorgensen, J., Ashburn, P., Booker, G.R., J. Appl. Phys., 61, 225–233 (1986).CrossRefGoogle Scholar
[7] Albu-Yaron, A., Barry, J.C., Booker, G.R., Proc. 8th European Congress on Electron Microscopy 1, Csanady, A., ed. (Budapest, Hungary), 521 (1984).Google Scholar
[8] Ajuria, S.A., Reif, R., To appear in J. Appl. Phys., January 1991.Google Scholar
[9] Loh, W.M., Swirhun, S.E., Crabbe, E., Saraswat, K.C., Swanson, R.M., Elec. Dev. Let., 6(9), 441 (1985).CrossRefGoogle Scholar
[10] Crabbe, E., Swirhun, S., del Alamo, J., Pease, R.F.W., Swanson, R.M., IEEE Int. Electron Devices Meeting, 28–31 (1986).Google Scholar
[11] Patton, G.L., Bravman, J.C., Plummer, J.D., IEEE Trans. Electron Devices, ED–SS(11), 1754–1768 (1986).CrossRefGoogle Scholar
[12] Chor, E.F., Ashburn, P., Brunnschweiler, A., IEEE Electron Device Letters, EDL–6, 516–518 (1985).CrossRefGoogle Scholar
[13] Brandon, R.H., Bradshaw, F.J., R.A.E. (Farnborough) Rep. 66095 (1966).Google Scholar
[14] Srolovitz, D.J., Safran, S.A., J. Appl. Phys., 60, 255 (1986).CrossRefGoogle Scholar
[15] Jiran, E., PhD Thesis, Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, 1990.Google Scholar
[16] Johnson, W.A., Mehl, R.F., Trans. AIME, 135, 416 (1939).Google Scholar
[17] Avrami, M., J. Chem. Phys., 7, 1103 (1939).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 9 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *