Hostname: page-component-5db6c4db9b-k8dct Total loading time: 0 Render date: 2023-03-23T06:08:50.771Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true
  • English

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD

Published online by Cambridge University Press:  17 March 2011

Se-Won Ryu ,
Do-Hyun Kwon ,
Sung-Gye Park  and
Hyoung-June Kim
Se-Won Ryu
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Do-Hyun Kwon
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Sung-Gye Park
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Hyoung-June Kim
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Get access

Abstract

We propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (cm2 /Vs) and on/off current ratio

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A5.8
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fonash, S.J., Yin, A., and Reber, D., Electrochem. Soc. Proc. 94–35, 33 (1994).Google Scholar
[2] Summer, R. C., Solid. State. Tech. 39, 1, 103 (1996).Google Scholar
[3] Sameshima, T., Elctrochem. Soc. Proc. 96–23, 21 (1996).Google Scholar
[4] Jayatissa, A.H., Hatanaka, Y., Nakanishi, Y., Ishikawa, K., J. Phys. D:Appl. Phys. Vol. 29 1636 (1996).CrossRefGoogle Scholar
[5] Kuriyama, H. et al. , IRDM 1991 Tech. Dig. 563 (1991).Google Scholar