Skip to main content Accessibility help
×
Home
Hostname: page-component-684899dbb8-v9xhf Total loading time: 0.591 Render date: 2022-05-17T21:54:00.583Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD

Published online by Cambridge University Press:  17 March 2011

Se-Won Ryu
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Do-Hyun Kwon
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Sung-Gye Park
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Hyoung-June Kim
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Get access

Abstract

We propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (cm2 /Vs) and on/off current ratio

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fonash, S.J., Yin, A., and Reber, D., Electrochem. Soc. Proc. 94–35, 33 (1994).Google Scholar
[2] Summer, R. C., Solid. State. Tech. 39, 1, 103 (1996).Google Scholar
[3] Sameshima, T., Elctrochem. Soc. Proc. 96–23, 21 (1996).Google Scholar
[4] Jayatissa, A.H., Hatanaka, Y., Nakanishi, Y., Ishikawa, K., J. Phys. D:Appl. Phys. Vol. 29 1636 (1996).CrossRefGoogle Scholar
[5] Kuriyama, H. et al. , IRDM 1991 Tech. Dig. 563 (1991).Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *