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Processing and Device Performance of GaN Power Rectifiers

Published online by Cambridge University Press:  03 September 2012

A.P. Zhang ,
G.T. Dang ,
X.A. Cao ,
H. Cho ,
F. Ren ,
J. Han ,
J.-I. Chyi ,
C.-M. Lee ,
T.-E. Nee  and
C.-C. Chuoa
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A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
G.T. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
J.-I. Chyi
Affiliation:
Department of Electrical Engineering National Central University, Chung-Li, 32054 Taiwan
C.-M. Lee
Affiliation:
Department of Electrical Engineering National Central University, Chung-Li, 32054 Taiwan
T.-E. Nee
Affiliation:
Department of Electrical Engineering National Central University, Chung-Li, 32054 Taiwan
C.-C. Chuoa
Affiliation:
Department of Electrical Engineering National Central University, Chung-Li, 32054 Taiwan
G.-C. Chi
Affiliation:
Department of Physics, National Central University, Chung-Li 32054 Taiwan
S.N.G. Chu
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA
R.G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
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Abstract

Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12µm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ωcm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.67
Copyright
Copyright © Materials Research Society 1999

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References

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