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Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation

Published online by Cambridge University Press:  15 July 2011

Beom-jong Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Dong-chan Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Yoon-jae Kim.
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Han-jin Lim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Ju-eun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Wook-yeol Yi
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Dae-hyun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Bong-hyun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Young-wan Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Sung-ho Kang
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Yung-seok Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Woo-jun Lee
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Seok-woo Nam
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Chil-hee Chung
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
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Abstract

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

1. Lim, K. Y., Sung, M. G., Cho, H. J., Kim, Y. S., Jang, S. A., Lee, S. R., Kim, K. O., Yang, H. S., Sohn, H. C., Pyi, S. H., Ku, J. C. and Kim, J. W., “Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices”, IEEE Elec. Device Letters, vol. 29, NO. 4, 04 2008, pp 338340 Google Scholar
2. Buh, H. S., Hong, G. H., Koo, S. H., Shin, B. Y., Jung, Y. G., Moon, U. I., Cho, J. T., Chang, M. H., Moon, H. S., W, D., “Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation“, Appl. Phys. Letters, vol. 85, 08 204, pp 988990 Google Scholar
3. Tseng, C. H., Chang, T. K., Chu, F. T., Shieh, J. M., Dai, B. T., Cheng, H. C. and Chin, Albert, “Investigation of Inductively Coupled Plasma Gate Oxide on Low Tmeperature Polycrystalline-Silicon TFTs”, IEEE Elec. Device Letters, vol. 23, NO. 6, 06, 2002, pp 333335 CrossRefGoogle Scholar
4. Tinoco, J. C., Estrada, M., Romero, G., “Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers”, Micro. Reliability, 43, 2003, pp 895903 CrossRefGoogle Scholar
5. Tokashiki, K., Araki, M., Nagase, M., Noguchi, K., Miyamoto, H. and Horiuchi, T., “Effect of Electron Temperature and Electron Density on Topography Dependent Charging(TDC) Damage in Inductively Coupled Plasma Etching Tool”, 3rd Inter. Symp. On Plasma-Induced Damage, 06, 1998. pp 183186 Google Scholar
6. Shin, H. C. andHu, Chenming, “Thin gate oxide damage due to plasma processing”, Semicond. Sci. Technol. 11, 1996, pp 463473 CrossRefGoogle Scholar
7. Groeseneken, G., Maes, H. E., Beltran, N. and Dekeers-maecker, R. F., “A reliable approach to charge-pumping measurements in MOS transistors”, IEEE Trans. Electr. Dev ., vol. 31, pp 4253, 1984 CrossRefGoogle Scholar
8. McWhorter, P. J. and Winokur, P. S., “Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors”, Appl. Phys. Lett ., vol. 48, pp 133135, 1985 CrossRefGoogle Scholar
9. Seki, Shunji, Osmu Kogure, and Bunjiro Tsujiyama, A Semi-Empirical Model for the Field-Effect Mobility of Hydrogenated Polycrystalline Silicon MOSFET's”, IEEE. Trans. Elec. Devices , vol. 35, NO. 5, 05 1988, pp 669674 CrossRefGoogle Scholar

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Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation
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