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Preparation and Characterization of Tin Oxide Nanowires for Gas Sensing

Published online by Cambridge University Press:  21 March 2011

Daihua Zhang ,
Zuqin Liu ,
Chao Li  and
Chongwu Zhou
Daihua Zhang
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Zuqin Liu
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Chao Li
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Chongwu Zhou
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
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Abstract

Efficient and reliable laser-ablation approaches for large-scale synthesis of SnO2 nanowires are reported. Transmission electron microscopy (TEM) and x-ray diffraction (XRD) were used to confirm the crystal structure of the nanowires. The results show that these nanowires had uniform diameters around 20 nm and lengths in the order of 10 νm. In addition, field effect transistors have been constructed based on individual SnO2 nanowires. Excellent n-type transistor characteristics have been observed for SnO2 nanowire transistors. Detailed analysis revealed threshold voltages ∼ -50V with on/off ratios as high as 103 at room temperature. These nanowire transistors were further demonstrated to work as sensitive UV detectors and gas sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M5.20.1
Copyright
Copyright © Materials Research Society 2004

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