Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-18T10:20:55.450Z Has data issue: false hasContentIssue false
  • English
  • Français

Point and Extended Defect Interactions in Silicon

Published online by Cambridge University Press:  15 February 2011

M. E. Law  and
S. K. Earles
M. E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
S. K. Earles
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
Get access

Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the defect behavior during short time, low temperature anneals is a key to explaining TED. The surface can play a defining role in the removal of point defects from the bulk, but there is a lot of controversy over the role and strength of the surface sink for point defects. The controversy will be reviewed, and new experimental results will be presented that investigate the role of the surface on TED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 379
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Rafferty, C. S., Vuong, H.-H., Eshraghi, S. A., Giles, M. D., Pinto, M. R., and Hillenius, S. J., “Explanation of Reverse Short Channel Effect by Defect Gradients,” presented at International Electron Devices Meeting, Washington, D.C., 1993.Google Scholar
[2] Eaglesham, D. J., Stolk, P. A., Gossmann, H. J., and Poate, J. M., “Implantation and Transient B Diffusion in Si: The Source of the Interstitials,” Applied Physics Letters, vol. 65, pp. 2305–7, 1994.Google Scholar
[3] Griffin, P. B. and Plummer, J. D., “Process Physics Determining 2-D Impurity Profiles in VLSI Devices,” presented at International Electron Devices Meeting, Los Angeles, 1986.Google Scholar
[4] Dort, M. J. v., Lifka, H., Zalm, P. C., Boer, W. B. d., Woerlee, P. H., Slotboom, J. W., and Cowern, N. E. B., “New Technique for Measuring Two-Dimensional Oxidation Enhanced Diffusion at Low Temperatures,” Applied Physics Letters, vol. 64, pp. 2130, 1994.Google Scholar
[5] Hu, S. M., “Interstitial and Vacancy Concentrations in Presence of Interstitial Injection,” J. Appl. Phys., vol. 57, pp. 1069, 1985.Google Scholar
[6] Hu, S. M., “Kinetics of Interstitial Supersaturation and Enhanced Diffusion in Short-Time/Low-Temperature Oxidation of Silicon,” J. Appl. Phys., vol. 57, pp. 4527, 1985.Google Scholar
[7] Dunham, S. T. and Jeng, N., “Dopant Diffusion During High-Temperature Oxidation of Silicon,” J. Appl. Physics, vol. 59, pp. 2016–2018, 1991.Google Scholar
[8] Frank, C. and Law, M. E., “Two-Dimensional study of the Effects of Nonamorphizing Silicon Implantation Damage on Phosphorus Diffusion,” Applied Physics Letters, vol. 64, pp. 1254–5, 1994.Google Scholar
[9] Park, H. and Law, M. E., “Point Defect Based Modeling of Low · Dose Silicon Implant Damage and Oxidation Effects on Phosphorus and Boron Diffusion in Silicon,” Journal of Applied Physics, vol. 72, pp. 3431–3440, 1992.Google Scholar
[10] Lim, D. R., Rafferty, C. S., and Klemens, F. P., “The Role of the Surface in Transient Enhanced Diffusion,” Appl. Phys. Lett., vol. 67, pp. 2302–2304, 1995.Google Scholar
[11] Dort, M. J. v., Wel, W. v. d., Slotboom, J. W., Cowern, N. E. B., Knuvers, M. P. G., Lifka, H., and Zalm, P. C., “Two-Dimensional Transient Enhanced Diffusion and Its Impact on Bipolar Transistors,” presented at International Electron Devices Meeting, San Francisco, 1994.Google Scholar