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Plasma Doping and Plasma-Less Doping of Semiconductor

Published online by Cambridge University Press:  03 September 2012

Bunji Mizuno
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Michihiko Takase
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Ichiro Nakayama
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Mototsugu Ogura
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Corresponding
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Abstract

New doping processes which can alternate the ion implantation to achieve the ultra shallow junction are reviewed. Mainly two ways have been proposed. One uses plasma and the other uses vapor phase reaction. 0.17μm Surface Channel (SC) - PMOSFET's have been successfully fabricated by especially plasma doping method.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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