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Piezoelectric Fields in Tilted GaInN Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Martin Feneberg
Affiliation:
martin.feneberg@uni-ulm.de, Ulm University, Institute of Semiconductor Physics, Albert-Einstein-Allee 45, Ulm, 89069, Germany
Frank Lipski
Affiliation:
frank.lipski@uni-ulm.de, Universität Ulm, Institut für Halbleiterphysik, Ulm, 89069, Germany
Rolf Sauer
Affiliation:
rolf.sauer@uni-ulm.de, Universität Ulm, Institut für Halbleiterphysik, Ulm, 89069, Germany
Klaus Thonke
Affiliation:
klaus.thonke@uni-ulm.de, Universität Ulm, Institut für Halbleiterphysik, Ulm, 89069, Germany
Thomas Wunderer
Affiliation:
thomas.wunderer@uni-ulm.de, Universität Ulm, Institut für Optoelektronik, Ulm, 89069, Germany
Peter Brückner
Affiliation:
peter.brueckner@uni-ulm.de, Universität Ulm, Institut für Optoelektronik, Ulm, 89069, Germany
Ferdinand Scholz
Affiliation:
ferdinand.scholz@uni-ulm.de, Universität Ulm, Institut für Optoelektronik, Ulm, 89069, Germany
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Abstract

GaInN/GaN quantum wells (QWs) grown on different crystal facets have been investigated by field-dependent photoluminescence and electroluminescence experiments. Externally applied voltage changes the total field strength and direction of the electric fields inside the quantum wells, consisting of piezoelectric and built-in fields. Electroluminescence with increasing current results in a peak shift due to screening of the field by the injected carriers. By modeling the peak shifts of the photoluminescence (PL) and electroluminescence (EL) signals we found strong piezoelectric fields for a {0001} sample and nearly vanishing fields for a sample grown on the {1-101} plane of GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1. Wunderer, T., Brückner, P., Neubert, B., Scholz, F., Feneberg, M., Lipski, F., Schirra, M., and Thonke, K., Appl. Phys. Lett. 89, 041121 (2006).CrossRefGoogle Scholar
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