Skip to main content Accessibility help
×
Home

Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application

Published online by Cambridge University Press:  21 March 2011


T. Wada
Affiliation:
Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan
S. Nishiwaki
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
Y. Hashimoto
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
T. Negami
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan

Abstract

Cu(In,Ga)Se2 thin films were prepared by physical vapor deposition. The CIGS films were deposited by three kinds of method. The 1st was “2-stage process” in which (In,Ga)2Se3 precursor layer was deposited on Mo coated soda-lime glass at the 1st stage, and then exposed to Cu and Se fluxes to form CIGS films at the 2nd stage. The 2nd method was an ordinary “3-stage process”. The 3rd method was “2-stage deposition and post-annealing process” in which CIGS films were deposited at low substrate temperatures and then the obtained CIGS precursor films were annealed in Se flux at high temperatures. A solar cell using a CIGS film prepared at 400 °C by the “2-stage process” showed an efficiency of 11.8 % and that using a CIGS film deposited at 350 °C by the “3-stage process” showed an efficiency of 12.4 %. The CIGS films deposited by the “2-stage deposition and post-annealing process” have similar microstructures to the device quality CIGS films deposited by the “3-stage process” at high temperatures. The solar cell with an MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5 % (Voc=0.634 V, Jsc=36.4 mA/cm2, FF=0.756). The thin CIGS films with a smooth and flat surface can be fabricated by the “2-stage deposition and post-annealing process”. The solar cell using a 0.7μm CIGS absorber layer showed an efficiency of over 12 % and a large open circuit voltage of 0.677 V.


Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Contreras, M. A., Egass, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F. and Noufi, R., Prog. in Photovolt: Res. Appl. 7, 311 (1999).3.0.CO;2-G>CrossRefGoogle Scholar
2. Nigami, T., Hashimito, Y. and Nishiwaki, S., Solar Energy Materials and Solar Cells 67, 331 (2001).CrossRefGoogle Scholar
3. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Negami, T. and Wada, T., J. Mater. Res. 14, 4514 (1999).CrossRefGoogle Scholar
4. Kohara, N., Nishiwaki, S., Negami, T. and Wada, T., Jpn. J. Appl. Phys. 39, 6316 (2000).CrossRefGoogle Scholar
5. Nishiwaki, S., Satoh, T., Hashimoto, Y., Negami, T. and Wada, T., J. Mater. Res. 16, 394 (2001).CrossRefGoogle Scholar
6. Wada, T., Nishiwaki, S., Hashimoto, Y. and Negami, T., Proceeding of 16 th European Photovoltaic Solar Energy Conference (held at Glasgow, UK), p.329 (2000).Google Scholar
7. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Shimakawa, S., Negami, T. and Wada, T., Solar Energy Materials and Solar Cells 67, 217 (2001).CrossRefGoogle Scholar
8. Nakada, T., Onishi, R. and Kunioka, A., Solar Energy Materials and Solar Cells 35, 209 (1994).CrossRefGoogle Scholar
9. Kushiya, K., Shimizu, A., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys. 34, 54 (1995).CrossRefGoogle Scholar
10. Kohara, N., Negami, T., Nishitani, M. and Wada, T., Jpn. J. Appl. Phys. 34, L1141 (1995).CrossRefGoogle Scholar
11. Wada, T., Hashimoto, Y., Nishiwaki, S., Sato, T., Hayashi, S., Negami, T. and Miyake, H., Solar Energy Materials and Solar Cells 67, 305 (2001).CrossRefGoogle Scholar
12. Negami, T., Nishiwaki, S., Hashimoto, Y., Kohara, N. and Wada, T., Proc. 2 nd World Conference on Photovoltaic Solar Energy Conversion (held at Vienna, Austria), p.1181 (1998).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 3rd December 2020. This data will be updated every 24 hours.

Hostname: page-component-b4dcdd7-nlmhz Total loading time: 0.26 Render date: 2020-12-03T22:40:38.590Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Thu Dec 03 2020 21:59:34 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": false, "languageSwitch": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *