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Physical Properties and Diffusion Characteristics of CVD-Grown TiSiN Films

Published online by Cambridge University Press:  17 March 2011

Dalaver Anjum
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Katharine Dovidenko
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Serge Oktyabrsky
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Eric Eisenbraun
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
Alain E. Kaloyeros
Affiliation:
UAlbany Institute for Materials and School of Nanosciences and Engineering, University at Albany-SUNY, Albany, 12222
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Abstract

TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370°C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μΩcm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550°C. Breakdown of this diffusion barrier occurred at 600°C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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