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Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

Published online by Cambridge University Press:  15 February 2011

D. Dimova-Malinovska
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, Photomat@bgearn.bitnet
M. Tzolov
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, Photomat@bgearn.bitnet
M. Kamenova
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, Photomat@bgearn.bitnet
N. Tzenov
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, Photomat@bgearn.bitnet
M. Sendova-Vassileva
Affiliation:
Central Laboratory for Eolar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria, Photomat@bgearn.bitnet
D. Nesheva
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, 1784 Sofia, Bulgaria
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Abstract

The results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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