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A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness

Published online by Cambridge University Press:  17 March 2011

Alex Salnick
Affiliation:
Therma-Wave, Inc., 1250 Reliance Way, Fremont, CA 94539
Lena Nicolaides
Affiliation:
Therma-Wave, Inc., 1250 Reliance Way, Fremont, CA 94539
Jon Opsal
Affiliation:
Therma-Wave, Inc., 1250 Reliance Way, Fremont, CA 94539
Amitabh Jain
Affiliation:
Texas Instruments, Inc., 125100 TI Boulevard, Dallas, Texas 75243
Duncan Rogers
Affiliation:
Texas Instruments, Inc., 125100 TI Boulevard, Dallas, Texas 75243
Lance Robertson
Affiliation:
Texas Instruments, Inc., 125100 TI Boulevard, Dallas, Texas 75243
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Abstract

Thermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters – depth and profile abruptness. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy (SIMS) data.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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