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Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

Published online by Cambridge University Press:  25 February 2011

Weimin Zhou
Affiliation:
Army Research Laboratory - EPSD, Fort Monmouth, NJ 07703
H. Shen
Affiliation:
Army Research Laboratory - EPSD, Fort Monmouth, NJ 07703 GEO-Centers Inc. Lake Hopatcong, NJ 07849
J. Pamulapati
Affiliation:
Army Research Laboratory - EPSD, Fort Monmouth, NJ 07703
M. Dutta
Affiliation:
Army Research Laboratory - EPSD, Fort Monmouth, NJ 07703
B. R. Bennett
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
C. H. Perry
Affiliation:
Northeastern University, Boston, MA 02115
D. W. Weyburne
Affiliation:
Rome Laboratory, Hanscom Air Force Base, MA 01731
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Abstract

Photoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers
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