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Phonon Spectra Dependence on Growth and Sample Treatment in β-FeSi2

Published online by Cambridge University Press:  03 September 2012

G. Guizzetti
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
F. Marabelli
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
M. Patrini
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
Y. Mo
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
N. Onda
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
H. Von KÄnel
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
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Abstract

Transmittance, reflectance and Raman measurements have been performed from 50 to 700 cm−1 on different thin films of β-FeSi2 epitaxially grown by MBE on Si substrates. Vibrational spectra show much more structures than the five phonons usually observed in this material; the dependence on the crystalline orientation, the thickness, the growth and the annealing temperature has been studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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Phonon Spectra Dependence on Growth and Sample Treatment in β-FeSi2
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