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Phase Transformations in Non-stoichiometric GaAs with Sb and P Doping

Published online by Cambridge University Press:  26 February 2011

Vladimir Chaldyshev
Affiliation:
chald.gvg@mail.ioffe.ru, Ioffe Physico-Technical Institute, RAS, Solid State Electronics, Polytechnicheskaya 26, St. Petersburg, N/A, Russian Federation
Nikolay A. Bert
Affiliation:
chald.gvg@mail.ioffe.ru, Ioffe Physico-Technical Institute, RAS, Solid State Electronics, Polytechnicheskaya 26, St. Petersburg, 194021, Russian Federation
Anton V. Boitsov
Affiliation:
chald.gvg@mail.ioffe.ru, Ioffe Physico-Technical Institute, RAS, Solid State Electronics, Polytechnicheskaya 26, St. Petersburg, 194021, Russian Federation
Yurii G. Musikhin
Affiliation:
chald.gvg@mail.ioffe.ru, Ioffe Physico-Technical Institute, RAS, Solid State Electronics, Polytechnicheskaya 26, St. Petersburg, 194021, Russian Federation
Maria A. Yagovkina
Affiliation:
chald.gvg@mail.ioffe.ru, Ioffe Physico-Technical Institute, RAS, Solid State Electronics, Polytechnicheskaya 26, St. Petersburg, 194021, Russian Federation
Valerii V. Preobrazhenskii
Affiliation:
chald.gvg@mail.ioffe.ru, Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation
Mikhail A. Putyato
Affiliation:
chald.gvg@mail.ioffe.ru, Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation
Boris R. Semyagin
Affiliation:
chald.gvg@mail.ioffe.ru, Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation
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Abstract

We investigate the phase transformation in non-stoichiometric GaAs films, which are doped with group V isovalent impurities, namely Sb and P. In contrast to Al and In atoms of group III, group V atoms may not only form substitutional alloys with the GaAs matrix, but also can be dissolved in As precipitates. Our experimental study based on transmission electron microscopy, x-ray diffraction and optical characterizations revealed an opposite impact of the P and Sb alloying on the nucleation, growth and coarsening of the second phase. While Sb enhances the precipitation rate, P retards it. Delta-doping with Sb causes two-dimensional precipitation, whereas such doping with P does not result in heterogeneous nucleation. The microstructure and strains have been found to be different around nanoinclusions in the Sb-doped and P-doped materials, indicating different thermodynamics and kinetics of segregation of the two isovalent impurities in As nanoclusters. We analyze the observed phenomena in terms of thermodynamic and kinetic models taking into account the underlying phase equilibriums and diffusion mechanisms.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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