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The Perspectives Of High-Rate Low Frequency a-Si:H Films Deposition: Solar Cell Application And Stability Control

Published online by Cambridge University Press:  10 February 2011

B. G. Budaguan ,
A. A. Aivazov ,
M. N. Meytin  and
A. G. Radosel'Sky
B. G. Budaguan
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, mictech@orgland.ru
A. A. Aivazov
Affiliation:
UniSil Corp. 401 National Av, Mountain View, CA, 94043
M. N. Meytin
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, mictech@orgland.ru
A. G. Radosel'Sky
Affiliation:
Moscow Institute of Electronic Technology, 103498 Moscow, RUSSIA, mictech@orgland.ru
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Abstract

The perspectives for solar cell application of structural inhomogeneous a-Si:H films deposited at high growth rates (∼10–20 Å/s) from 100% SiH4 in low frequency (LF) 55kHz glow discharge plasma have been investigated. In this case the influence of structural inhomogeneity on dark dc and photoconductivities and light-induced defect generation kinetics (Staebler-Wronski effect, SWE) in a-Si:H films have been studied. The microstructure of films was investigated by IR spectroscopy analysis. Microstructural parameter R=[SiH2]/([;SiH]+[SiH2]), was used for the quantitative characterization of structural inhomogeneity in the material bulk.

It was found that Fermi level position is fixed by deep defect states and does not depend on microstructure parameter R. The comparative analysis of photoconductivity modeling and ESR measurements have shown that recombination in a-Si:H films is controlled by neutral dangling bonds and doesn't depend on parameter R. Meanwhile it was found that the kinetics of light-induced defect generation was controlled by SiH2 or clustered SiH groups content. Thus, the above results allow to perform an independent control of stability and electronic properties of a-Si:H films deposited in LF glow discharge plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 297
Copyright
Copyright © Materials Research Society 1998

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References

1. Keppner, H., Kroll, U., Meier, J., and Shah, A., Solid State Phenomena 44–46 (1995) 97.Google Scholar
2. Budaguan, B.G., Aivazov, A.A and Meytin, M.N in Amorphous Silicon Technology, edited by Hack, M., Schiff, E.A., Wagner, S., Schropp, R.E.I., and Matsuda, A. (Mater. Res. Soc. Proc. 420, Pittsburgh, PA 1996), p. 635–640.Google Scholar
3. Budaguan, B.G., Aivazov, A., Radoselsky, A.G., and Popov, A.A. in Amorphous and Microcrystalline Silicon Technology, edited by Schiff, E.A., Hack, M., Wagner, S., Schropp, R.E.I., and Shimizu, I. (Mater. Res. Soc. Proc. 467, Pittsburgh, PA 1997), in press.Google Scholar
4. Shen, D.S. and Wagner, S., J. Appl. Phys. 78, p. 278 (1995).Google Scholar
5. 10. Kakalios, J., Jackson, W.B. in Amorphous Silicon and Related Materials, edited by Fritzsche, H., (World Scientific, New Jersey, 1988), p.207.sGoogle Scholar