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The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector
Published online by Cambridge University Press: 22 February 2011
Abstract
Medium-energy ion spectroscopy using a conventional ion implanter has been developed to study the properties of semiconductor subsurface regions. The system is equipped with solid state detector and operaties with He+ ion energy up to 200 keV. We have tested the system performance for various applications, such as, silicon diffusion through a thin Au layer, a low dose, low energy As implantion and damage of silicon surface caused by plasma treatment.
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- Copyright © Materials Research Society 1994