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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Patterned Carbon Nanotube Thin-Film Transistors with Transfer-Print Assembly

Published online by Cambridge University Press:  01 February 2011

Vinod. K. Sangwan ,
D. R. Hines ,
V. W. Ballarotto ,
G. Esen ,
M. S. Fuhrer  and
E. D. Williams
Vinod. K. Sangwan
Affiliation:
vinod_sag@yahoo.co.uk, University of Maryland (College Park), Department of Physics, 8309, 20th Avenue, Adelphi, MD, 20783, United States
D. R. Hines
Affiliation:
hines@lps.umd.edu, University of Maryland, Department of Physics, College Park, MD, 20742, United States
V. W. Ballarotto
Affiliation:
vince@lps.umd.edu, Laboratory for Physical Sciences, College Park, MD, 20740, United States
G. Esen
Affiliation:
gokhan@umd.edu, University of Maryland, Department of Physics, College Park, MD, 20742, United States
M. S. Fuhrer
Affiliation:
mfuhrer@physics.umd.edu, University of Maryland, Department of Physics, College Park, MD, 20742, United States
E. D. Williams
Affiliation:
edw@physics.umd.edu, University of Maryland, Department of Physics, College Park, MD, 20742, United States
Corresponding
E-mail address:
vinod_sag@yahoo.co.uk
hines@lps.umd.edu
vince@lps.umd.edu
gokhan@umd.edu
mfuhrer@physics.umd.edu
edw@physics.umd.edu
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Abstract

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method.

Transfer printing was used to fabricate devices having both top gate and bottom gate configurations. Replacement of the SiO2 dielectric with PMMA correlates with a decreased hysteresis in the transconductance behavior. Encapsulation of the CNTs between the polymeric substrate and dielectric layer yields ambipolar behavior. Variations in device performance are also observed as a function of CNT film density and channel length, suggesting changing contributions of the metallic and semiconducting CNTs to the transport mechanism.

Keywords

microelectronics organic semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-57
Copyright
Copyright © Materials Research Society 2007

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