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The Oxide/Nitride Interface: a study for gate dielectrics and field passivation

Published online by Cambridge University Press:  01 February 2011

B.P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J.R. LaRoche
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
A.H. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
E. Lambers
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. Siebein
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The study of the effects of substrate surface preparation of GaN, both in-situ and ex-situ and the subsequent deposition of dielectric materials is necessary to create a viable GaN FET technology. Surface preparation techniques have been explored using RHEED, AES, SIMS and C-V measurements to produce films of low interface trap density, 1–2E11 eV−1cm−2. A similar study of the as-fabricated HEMT surface was carried out to create a cleaning procedure prior to dielectric passivation. Dielectric films of Sc2O3 and MgO were deposited via gas-source MBE. Post-deposition materials characterization included AES, TEM, XRR and XPS, as well as gate pulse and isolation current measurements for the passivated HEMT devices. From this study, the relationship between the interface structure and chemistry and the quality of the oxide/nitride electrical interface has been determined. The resulting process has led to the near elimination of the current collapse phenomenon. In addition, the resulting oxide/nitride interface quality has allowed for the first demonstration of inversion in GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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