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Orientation and Phase Formation of Bi4Ti3O12 Film on (100) Silicon by APMOCVD and RTA

Published online by Cambridge University Press:  15 February 2011

H. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
X.J. Su
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
J.M. Zeng
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
Z. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
S.X. Shang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
M. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, P.R. CHINA
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Abstract

Bismuth titanate thin films have been grown on (100) silicon substrate by atmospheric pressure metalorganic chemical vapour deposition (APMOCVD). The phase formation of Bi-Ti-0 films are dependent upon the composition, growth temperature and RTA post-annealing process. The film grown at 550°C, under optimized growth condition, is single crystal film with (100) orientation, while the (001) preffered oriented films were obtained after rapid thermal annealing. The orientation of Bi4Ti3O12 films mainly depends upon the lattice match with the substrate. At 550°C, the best lattice match is (100) of Bi4Ti3O12 with (100) of silicon. At higher temperature (>675°C), the Bi4Ti3O12 has a tetragonal structure and the best lattice match is (001) Bi4Ti3O12 with (100) of silicon due to the different thermal expansion coefficient of two materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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