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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

Published online by Cambridge University Press:  15 July 2011

Sung-Min Yoon ,
Shinhyuk Yang ,
Soon-Won Jung ,
Sang-Hee Ko Park ,
Chun-Won Byun ,
Min-Ki Ryu ,
Himchan Oh ,
Kyounghwan Kim ,
Chi-Sun Hwang ,
Kyoung-Ik Cho  and
Byoung-Gon Yu
Sung-Min Yoon
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Shinhyuk Yang
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Soon-Won Jung
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Sang-Hee Ko Park
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Chun-Won Byun
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Min-Ki Ryu
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Himchan Oh
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Kyounghwan Kim
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Chi-Sun Hwang
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Kyoung-Ik Cho
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Byoung-Gon Yu
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
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Abstract

An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Keywords

memory ferroelectric semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f09-10
Copyright
Copyright © Materials Research Society 2011

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References

1. Jung, M., Kim, J., Noh, J., Lim, N., Lim, C., Lee, G., Kim, J., Kang, H., Jung, K., Leonard, A. D., Tour, J. M. and Cho, G., IEEE Trans. Electron Device 52, 2502 (2010).Google Scholar
2. Lin, K. L. and Jain, K., IEEE Electron Device Lett. 30, 14 (2009).CrossRefGoogle Scholar
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5. Ueda, N., Ogawa, Y., Tanaka, K., Yamamoto, K. and Yamauchi, Y. Dig. Tech. Papers Int. Symp. SID, Seattle, 05, 2010 p. 615.Google Scholar
6. Yoon, S. M., Jung, S. W., Yang, S. H., Ko, S. H. Park, Yu, B. G. and Ishiwara, H., Curr. Appl. Phys. (In press)Google Scholar

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