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Optoelectronics and Photovoltaic Applications of Microcrystalline Sic

Published online by Cambridge University Press:  21 February 2011

Y. Hamakawa ,
Y. Matsumoto ,
G. Hirata  and
H. Okamoto
Y. Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Y. Matsumoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
G. Hirata
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
H. Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
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Abstract

A review is given of the electrical and optical properties of hydrogenated microcrystalline silicon carbide (μc-SiC:H) films prepared by ECR (Electron Cyclotron Resonance) plasma chemical vapor deposition. The material produced with the ECR plasma technology has a very wide energy gap from 2 to 2.8 eV with good valency electron controllability, e.g., a dark conductivity as high as 10 Scmg− which is more than seven orders of magnitude larger than that of amorphous SiC:H.

Employing this material as a wide gap heterojunction window, 15.4% and 12.0% conversion efficiencies have been achieved with the structures of ITO/p type μc-SiC:H/n type poly-Si and p type vc-SiC:H/i type a-Si:H/n type Pc-Si:H heterojunction solar cells, respectively. The successful development of a visible light thin film light emitting diode show the promise of microcrystalline materials for optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 291
Copyright
Copyright © Materials Research Society 1990

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