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Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4

Published online by Cambridge University Press:  01 February 2011

Chung-Hsiang Chang
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Chin-Hua Hsieh
Affiliation:
National Taiwan University, Department of Materials Science and Engineering No. 101, Section 2, Kuang Fu Rd. Hsinchu 300 Taiwan
Li-Jen Chou
Affiliation:
National Tsing Hua University Department of Materials Science and Engineering No. 101, Section 2, Kuang Fu Rd. Hsinchu 300 Taiwan
Gong-Ru Lin
Affiliation:
National Taiwan University Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering No. 1, Roosevelt Rd. Sec. 4 Taipei 10617 Taiwan
Corresponding
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Abstract

Effect of O/Si composition ratio on near-infrared photoluminescence (PL) of PECVD grown Si-rich SiOx after 1100°C annealing are analyzed by Rutherford backscattering (RBS) and Fourier-transformed infrared spectroscopy (FTIR) to show nonlinear relationship with strongest PL at 760 nm at optimized O/Si = 1.24, total Si concentration of 44.6 atom.%, and N2O/SiH4 fluence ratio of 4.5. A nearly Gaussian function of the normalized PL intensity vs. O/Si composition ratio has been observed due to the significant variation on the Si nanocrystals size with the density of the excessive Si atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4
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Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4
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