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Optically-Induced, Room-Temperature Oxidation of Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

Chien-Fan Yu
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Michael T. Schmidt
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Dragan V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Richard M. Osgood
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
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Abstract

Room-temperature, optically-induced oxidation of the gallium arsenide surface has been studied with laser radiation of different wavelengths. It was found that deep-ultraviolet light is much more effective in enhancing oxidation than near-ultraviolet or visible light. The growth rate of the oxide was also found to be drastically increased by the presence of chemisorbed water molecules on the surface.

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Articles
Copyright
Copyright © Materials Research Society 1987

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References

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