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Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices

Published online by Cambridge University Press:  01 February 2011

Plamen Paskov
Affiliation:
plapa@ifm.liu.se, Linkoping University, Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, SE-58183, Sweden, +46 13 282688
Bo Monemar
Affiliation:
bom@ifm.liu.se, Linkoping University, Department of Physics, Chemistry and Biology, Linkoping, SE-58183, Sweden
Satoshi Kamyiama
Affiliation:
skami@ccmfs.meijo-u.ac.jp, Meijo University, Department of Electrical and Electronic Engineering and High-Tech Reserch Center, Nagoya, 468, Japan
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp, Meijo University, Department of Electrical and Electronic Engineering and High-Tech Reserch Center, Nagoya, 468, Japan
Isamu Akasaki
Affiliation:
akasaki@caufs.meijo-u.ac.jp, Meijo University, Department of Electrical and Electronic Engineering and High-Tech Reserch Center, Nagoya, 468, Japan
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Abstract

We report a photoluminescence study of near-surface GaN/AlN superlattices grown by metalorganic chemical vapor deposition (MOCVD) on a thick GaN layer. Undoped, Si-doped and Mg-doped structures with the well/barrier thickness ratio 3:1 and different periods are investigated. It is found that the energy position, intensity and linewidth of the emission are determined by the interplay of the built-in polarization field, depletion field and screening by the free carriers. In n-type structures an electron accumulation at the bottom interface is evidenced by the observed recombination of the two-electron gas with the photo-excited holes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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