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Optical Characterization Of Self-Assembled Ge Dots On Silicon

Published online by Cambridge University Press:  17 March 2011

F. Marabelli
Affiliation:
INFM-Phys.Dept. “A.Volta”, University of Pavia, Italy
A. Rastelli
Affiliation:
INFM-Phys.Dept. “A.Volta”, University of Pavia, Italy Laboratorium für Festkörperphysik, ETH Zürich, Switzerland
A. Valsesia
Affiliation:
INFM-Phys.Dept. “A.Volta”, University of Pavia, Italy
H.von Känel
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, Switzerland
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Abstract

Self assembled quantum dots of Ge were obtained by magnetron sputter epitaxy of seven monolayers of Ge on a 33nm thick undoped Si buffer grown on top of a p-doped (100) Si substrate. The samples obtained in this manner were then capped with an increasing number of silicon layers in order to study the effect of Si deposition on the strain and the morphology of the dots. They were characterized “ex situ” by spectroscopic ellipsometry and Raman spectroscopy. The optical experiments revealed well defined differences between the capped and uncapped samples and among samples with different cap thicknesses.

By monitoring the energy and the splitting of the E0', E1 and E2 interband optical transitions of Ge and the Ge-Si vibrational mode, the optical measurements evidence strain effects as well as the formation of SiGe alloy, in agreement with the ``in situ'' STM measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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