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Optical and Structural Properties of InAs/GaSb Nanostructures
Published online by Cambridge University Press: 01 February 2011
The nanostructures self-organized via lateral composition modulation in 140 period (InAs)13/(GaSb)13 superlattices grown by molecular beam epitaxy have been studied by highresolution x-ray diffraction and infrared absorption. Three samples were analyzed in this study; two with lateral composition modulation and one without. X-ray reciprocal space map scans were taken to determine the average morphology of the modulated structures. Both vertical and lateral satellite peaks were observed for the samples with composition modulation, indicating the formation of two-dimensional nanowire arrays. The vertical wavelength measured for the two samples was twice the period intended by the growers. This is due to the face-centered cubic type stacking of the nanowires. Infrared absorption spectra of these two samples were compared to the spectra of the sample with no lateral composition modulation. Transitions involving the heavy- and light-hole bands in the GaSb hole quantum well and the electron subbands of the InAs electron quantum well were not evident for the samples with lateral composition modulation, indicating that the nanostructure of the lateral composition modulation affects the optical response of the sample, which is important for optoelectronic device applications.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T9.9
- Copyright © Materials Research Society 2004