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On the Burste In-Moss Shift in Quantum Confined Wide-Band Gap Semiconductors
Published online by Cambridge University Press: 25 February 2011
Abstract
We study the Burstein-Moss shift (BMS) in quantum wiies and quantum dots of wide-gap semiconductors, taking Ge as an example, it is found that the BMS increases with increasing electron concentration in a ladder like manner. The numerical values of the BMS is greatest in quantum dots and least in quantum wells. The theoretical analysis is in agreement with the experimental results as given elsewhere.
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- Copyright © Materials Research Society 1992
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