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OMVPE of InAlAs Using Alternative Al and As Precursors

Published online by Cambridge University Press:  27 January 2014

Brittany L. Smith
Affiliation:
Rochester Institute of Technology, 25 Lomb Memorial Drive, Rochester, NY 14623, U.S.A.
Nichole M. Hoven
Affiliation:
Rochester Institute of Technology, 25 Lomb Memorial Drive, Rochester, NY 14623, U.S.A.
Glen Hillier
Affiliation:
MicroLink Devices, 6457 W Howard St, Niles, IL 60714, U.S.A.
Seth M. Hubbard
Affiliation:
Rochester Institute of Technology, 25 Lomb Memorial Drive, Rochester, NY 14623, U.S.A.
David V. Forbes
Affiliation:
Rochester Institute of Technology, 25 Lomb Memorial Drive, Rochester, NY 14623, U.S.A.
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Abstract

Alternate aluminum and arsenic precursors were investigated for InAlAs grown by organometallic vapor phase epitaxy (OMVPE). The quality of the InAlAs growths was investigated by secondary-ion mass spectrometry (SIMS) to measure impurity concentrations. Trends are extracted from SIMS measurements for each precursor as a function of V/III ratio and growth temperature. Two arsenic precursors, arsine and tertiarybutylarsine (TBAs), were chosen to compare InAlAs growth quality. The impurity concentrations measured by SIMS decrease as the V/III ratio increases, for both arsine and TBAs growths. Impurities also decrease as growth temperature increases. Two aluminum precursors, trimethylaluminum (TMAl) and tritertiarybutylaluminum (TTBAl), were used to compare the effect of alumimum precursor on carbon and oxygen impurity levels. TMAl is widely studied in literature, though TTBAl is less common. This study represents the first report using the TTBAl precursor for InAlAs growth. Each aluminum source is used in conjunction with each aforementioned arsenic precursor in order to compare all possible precursor combinations. TMAl growths demonstrated decreasing impurities with increasing V/III ratio. TTBAl growths did not exhibit such a dependence, impurity concentrations remained virtually constant regardless of V/III ratio.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Naritsuka, S., Noda, T., Wagai, A., Fujita, S., and Ashizawa, Y., Jpn. J. Appl. Phys., Part 2 32, L-925 (1993).CrossRefGoogle Scholar
Chen, J. C., Huang, Z. C., Lee, K. J., and Kanjolia, R., J. Electron. Mater. 26(4), 361 (1997).CrossRefGoogle Scholar
Neumann, S., Prost, W., and Tegude, F. J., J. Cryst. Growth 248, 130 (2003).CrossRefGoogle Scholar
Velling, P., Agethen, M., Prost, W., and Tegude, F. J., J. Cryst. Growth 221, 722 (2000).CrossRefGoogle Scholar
Hobson, W. S. and Geva, M. in Alternative Group V Precursors for the Growth of Al-based III-V Epitaxial Layers by OMVPE (Mater. Res. Soc. Symp. Proc. 282, 1993) pp. 9398.CrossRefGoogle Scholar
Keiper, D., Velling, P., Brennemann, A., Agethen, M., van den Berg, C., Bertenburg, R.M., Schineller, B., and Heuken, M., J. Cryst. Growth 248, 153 (2003).CrossRefGoogle Scholar
Leu, S., Hohnsdorf, F., Stolz, W., Becker, R., Salzmann, A., and Greiling, A., J. Cryst. Growth 195, 98 (1998).CrossRefGoogle Scholar
Wang, C. A., Finn, M. C., Salim, S., Jensen, K. F., and Jones, A. C., Appl. Phys. Lett. 67(10), 1384 (1995).CrossRefGoogle Scholar
Wang, C. A., Salimand, S., Jensen, K. F., and Jones, A. C., J. Electron. Mater. 25(5), 771 (1996).CrossRefGoogle Scholar
Buchan, N. I., Kuech, T. F., Scilla, G., and Cardone, F., J. Cryst. Growth 110, 405 (1991).CrossRefGoogle Scholar
Kuech, T. F. and Potemski, R., Appl. Phys. Lett. 47, 821 (1985).CrossRefGoogle Scholar
Kuech, T. F., Veuhoff, E., Kuan, T. S., Deline, V., and Potemski, R., J. Cryst. Growth 77, 257 (1986).CrossRefGoogle Scholar
Larsen, C. A., Buchan, N. I., Li, S. H., and Stringfellow, G. B., J. Cryst. Growth 94, 663 (1989).CrossRefGoogle Scholar