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Nucleation of Dislocations in Strained Epitaxial Layers
Published online by Cambridge University Press: 25 February 2011
Abstract
The introduction of dislocations into initially dislocation free strained epitaxial layers is examined. Examples are given of several different sources of dislocations, and the influence of these upon the final microstructure is shown. The sources most prevalent appear to be growth defects in epilayers with strains less than about 0.01, and topography-induced surface nucleated half-loops at strains greater than about 0.02.
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- Copyright © Materials Research Society 1991