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Nucleation of Dislocations in SIGe Layers
Published online by Cambridge University Press: 21 February 2011
Abstract
We present an x-ray diffraction study of the variation of the tilt angle between a relaxed Si1−xGex epitaxial layer and the Si (001) substrate. Such measurements provide the basis for a new method to determine the nucleation activation energy of misfit dislocations. We show that the nucleation activation energy for 60° dislocations in the case of the multiplication mechanism observed in graded SiGe layers grown by UHV-CVD at low temperature is 4 eV.
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- Copyright © Materials Research Society 1994