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Novel ‘Photochemical deposition’ and conventional ‘Electrochemical deposition’ of CdS and HgxCd1−xTe thin films and their characterization for solar cell device applications

Published online by Cambridge University Press:  21 March 2011

R. Kumaresan
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya-466, Japan
M. Ichimura
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya-466, Japan
S.Moorthy Babu
Affiliation:
Crystal Growth Centre, Anna University, Chennai-25, India
P. Ramasamy
Affiliation:
Crystal Growth Centre, Anna University, Chennai-25, India
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Abstract

Solar cell devices of the structures CdS/CdTe and CdS/HgCdTe, based on II-VI semiconductor thin films have been fabricated and analyzed. CdS thin films were deposited by the recently established novel deposition technique, namely, 'Photochemical deposition' and the Cd rich HgxCd1−xTe films used for the device fabrication were deposited by the conventional ‘electrochemical deposition’ technique. First solar cell devices of the structures CdS/CdTe and CdS/HgCdTe using photochemically deposited CdS films, were fabricated and analyzed for the conversion efficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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Novel ‘Photochemical deposition’ and conventional ‘Electrochemical deposition’ of CdS and HgxCd1−xTe thin films and their characterization for solar cell device applications
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