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A Novel Four Terminal Poly-Si Tft Suppressing Kink and Improving Reliability

Published online by Cambridge University Press:  10 February 2011

Cheol-Min Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Ji-Hoon Kang
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Kee-Chan Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
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Abstract

We fabricated a new device, which employs counter-doped lateral body terminal (CLBT) in order to suppress kink effects and improve the device stability. Proposed device also employs a buried channel (BC), which increases ON-current and operating frequency. Although LDD structure is not employed in the proposed device, low OFF-current is successfully obtained due to elimination of minority carrier through CLBT. We have measured the dynamic properties of poly-Si TFT device and circuit. The reliability of TFT and circuits after AC stress is also discussed in our paper.

The proposed poly-Si TFT has high ON-current and low OFF-current compared with conventional 3-terminal poly-Si TFT. The 4-terminal device characteristics were measured with source and CLBT shorted. The proposed device exhibits superior performance to conventional device in ON-current because BC prevents carrier scattering to gate oxide. We have performed bias and high temperature stress test of ring oscillator in order to investigate dynamic reliability between conventional poly-Si TFT and proposed 4-terminal poly-Si TFT. Our experimental results show that BC enables the device to have high mobility and switching frequency (33MHz at VDD=15V). The minority carrier elimination of CLBT suppresses kink effects and makes superb dynamic reliability of CMOS circuit.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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