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Nonlinear optical properties of plasma enhanced chemical vapour deposition grown silicon nanocrystals

Published online by Cambridge University Press:  01 February 2011

G. Vijaya Prakash
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
M. Cazzanelli
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
Z. Gaburro
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
L. Pavesi
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
F. Iacona
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica, Università di Catania, Corso Italia 57, 95129 Catania, Italy
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Abstract

We present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ(3) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of χ(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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