Skip to main content Accessibility help
×
Home
Hostname: page-component-8bbf57454-9s44l Total loading time: 0.178 Render date: 2022-01-22T09:55:43.796Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

K. Dornich
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address: KayDornich@gmx.de
T. Hahn
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address: KayDornich@gmx.de
J.R. Niklas
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address: KayDornich@gmx.de
Get access

Abstract

Recent progress in experimental technique made it possible to improve the sensitivity of microwave detected photoconductivity by several orders of magnitude. This opens completely new possibilities for a contact less non-destructive electrical defect characterization of silicon wafers and even of epitaxial layers on substrates with extremely low resistivity. Electrical properties such as lifetime, mobility and diffusion length can be measured without contacts also at very low injection levels with a resolution only limited by the diffusion length of the charge carriers. The doping level of the material plays no major role.

Owing to the high sensitivity, thermal excitation of charge carriers out of defect levels filled during the photo pulse can also be observed. This leads to defect specific photoconductivity transients which deliver pieces of information like DLTS, however, again without contacts, non critical doping, and with high spatial resolution.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gründig-Wendrock, B., Jurisch, M., Niklas, J.R., Materials Science and Engineering B91-92, 371375, (2002)CrossRefGoogle Scholar
2 Niklas, J.R., Siegel, W., Jurisch, M., Kretzer, U., Mat. Science and Engin. B80, 206209, (2001)CrossRefGoogle Scholar
3 Dornich, K., Gründig-Wendrock, B., Hahn, T., Niklas, J.R., Advanced Engineering Materials, 598-602, (2004)Google Scholar
4 Dornich, K., Hahn, T., Niklas, J.R., Freiberger Forschungshefte B327, 270278, (2004)Google Scholar
5 Borghesi, A., Pivac, B., Sassella, A., Stella, A., J. Appl. Phys. 77 (9), 41694244, (1995)CrossRefGoogle Scholar
6 Wohlrab, A., Gruendig-Wendrock, B., Jurisch, M., Kiessling, F.-M. and Niklas, J.R., Eur. Phys. J. Appl. Phys., Vol. 27, No. 1-3, 223226, (2004)CrossRefGoogle Scholar
7 Gruendig-Wendrock, B. and Niklas, J.R., Phys.stat.sol., No. 3, 885888, (2003)Google Scholar
8 Gruendig-Wendrock, B., Dornich, K., Hahn, T., Kretzer, U. and Niklas, J.R., Eur. P Phys. J. Appl., Vol. 27, No. 1-3, 363366, (2004)CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *