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New Paramagnetic Center and High Conductivity in a-Si1-x Ru x :H Thin Films

Published online by Cambridge University Press:  19 November 2013


Jian He
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Wei Li
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Rui Xu
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
An-ran Guo
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Yin Wang
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Ya-dong Jiang
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Corresponding
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Abstract

In this work, the metallic element Ru is introduced into a-Si:H. The structural and electrical properties of the films doped with Ru have been investigated. Raman spectra reveal that the addition of Ru disarranges further the intrinsically disordered amorphous network and generates more coordinated defects. Meanwhile, a new paramagnetic signal, associated with the holes localized in valence band tail, has been observed. Moreover, the conductivity increases by about nine orders of magnitude with the increase of doping concentration, and the temperature coefficient of resistance (TCR) results show that this material may have a potential application in the infrared detectors.


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Copyright © Materials Research Society 2013 

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