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New Class of the Semiconductor Materials for Infrared Photodetection

Published online by Cambridge University Press:  25 February 2011

Boris A. Akimov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Nikolai B. Brandt
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Sergei N. Chesnokov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
Dmitriy R. Khokhlov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, USSR
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Abstract

We Present the new class of infrared Photodetectors based on the lead-tin tellurides doped with group III impurities. The Persistent photoconductivity effect appearing in these materials provides the opportunity of internal signal integration resulting in the considerable increase in signalto- noise ratio. The integration characteristic time may be changed by means of the operating temperature or alloy composition variation. Even if the integration time is higher than the operation time required there exists an opportunity to quench quickly (∼10−5s) the Persistent photoconductivity. In some regime of quenching the effect of giant quantum efficiency stimulation has been observed. Both the bulk crystal and thin film technologies of the Photodetector Production are developed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

1. Lang, D.W. and Logan, R.A. Phys.Rev.Lett. 39 635 (1977).CrossRefGoogle Scholar
2. Kaidanov, V. I., Nemov, S.A., Parfen'ev, R.V. and Chamchur, D.V. Pis'ma, v Zh.Eksp.Teor.Fiz. 32 517 (1982).Google Scholar
3. Akimov, B.A., Brandt, N.B., Ryabova, L.I., Khokhlov, D.R., Chudinov, S.M. and Yatsenko, O.B. Pis'ma, V Zh.Eksp.Teor.Fiz. 31 304 (1980).Google Scholar
4. Averkin, A.A., Kaidanov, V.I. and Mel'nik, R.B. Fiz.Tekh.Polupr. 5 91 (1971).Google Scholar
5. Akimov, B.A., Brandt, N.B., Ryabova, L.I., Sokovishin, V.V. and Chudinov, S.M. J. Low Temp.PhYs. 51 9 (1983).CrossRefGoogle Scholar
6. Akimov, B.A., Zhlomanov, V.P., Ryabova, L.I., Chudinov, S.M. and Yatsenko, O.B. Sov. PhYs. Semicond. 13 759 (1979).Google Scholar
7. Akimov, B.A., Ryabova, L.I, Yatsenko, O.B. and Chudinov, S.M. Sov.PhYs.Semicond. 13 441 (1979).Google Scholar
8. Akimov, B.A., Brandt, N.B., Kurbanov, K.R., Ryabova, L.I., Khasanov, A.T. and Khokhlov, D.R. Sov.PhYs.Semicond. 17 1021 (1983).Google Scholar
9. Akimov, B.A., Brandt, N.B., KlimonskiY, S.O., Ryabova, L. I. and Khokhlov, D.R. Phys.Lett.A 88A 483 (1982).CrossRefGoogle Scholar
10. Volkov, B.A. and Pankratov, O.A. Sov.Phys.Dokl. 25 922 (1985).Google Scholar
11. ARimov, B.A., Brandt, N.B., Kerner, B.S.. Niki-orov, V.N. and Chudinov, S.M. Sol.St.Comm. 43 31 (1982).Google Scholar
12. Aximov, B.A., Brandt, N.B.. Khokhlov, D.R. and Chesnokov, S.N. Sov. Tech. Phys. Lett. 14 325 (1988).Google Scholar
13. Zasavitskiy, I.I., Matsonashvili, B.N., Pankratov, O.A. and Trofimov, V.T. Sov.Phys.JETP Lett. 42 1 (1985).Google Scholar
14 Golubev, V.G., Grechko, N.I., LYkov, S.N., Sabo, E.P. and Chernik, I.A. Fiz.Tekh.Polupr. 11 1704 (1977).Google Scholar
15. ZasavitskiY, I.I., Iatveenko, A.V., Matsonashvili, B.N. and Trofimov, V.T. Sov.Phys.Semicond. 20 135 (1986).Google Scholar
16. Akimov, B.A., Nikorich, A.B., Khokhlov, D.R. and Chesnokov, S.N. Fiz.Tekh.Polupr. 23 668 (1989).Google Scholar
17. Romchevich, N., Popovich, Z.V. and Khokhlov, D.R. Phys.Rev.B (in press).Google Scholar
18. Akimov, B.A., Brandt, N.B., Nikorich, A.V., Ryabova, L.I. and Sokovishin, V.V. Sov.PhYs.JETP Lett. 39 265 (1984).Google Scholar
19. Akimov, B.A., Brandt, N.B., Ryabova, L.I. and Khokhlov, D.R. Sov.Tech.Phys.Lett. 6 544 (1980).Google Scholar
20. Akimov, B.A., Brandt, N.B., Chesnokov, S.N., Egorov, K.N. and Khokhlov, D.R. Sol.StComm. 66 811 (1988).Google Scholar
21. ARimov, B.A., Brandt, N.B., Gas'kov, A.M., Zlomanov, V.P., Ryabova, L. I. and Khokhlov, D.R. Sov.Phys.Semicond. 17 53 (1983).Google Scholar
22. Akimov, B.A., Belokon', S.A., Dashevskiy, Z.M., Egorov, K.N., Lakeenkov, V.M. and Ryabova, L.I. Sov.Phys. Semicond. (in Press).Google Scholar
23. Belogorokhov, A.I. (Private communication).Google Scholar
24. Belogorokhov, A.I., Ivanchik, I.I., Khokhlov, D.R., PoPovich, Z.V. and Romchevich, N.. Presented at the 1990 MRS Fall Meeting, Boston, MA, 1990 (unPublished).Google Scholar
25. McKnight, S.W. and El-Rayess, M.K., in International Conference on Narrow-Gap Semiconductors A Relate Material Abstracts Gaithersburg, Maryland, USA, 1989.Google Scholar

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New Class of the Semiconductor Materials for Infrared Photodetection
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