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Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application

Published online by Cambridge University Press:  31 January 2011

Dong Uk Lee
Affiliation:
kom7807@gmail.com, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Tae Hee Lee
Affiliation:
taeddy0518@naver.com, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Eun Kyu Kim
Affiliation:
ek-kim@hanyang.ac.kr, Hanyang Universiyu, Physics, Seoul, Korea, Republic of
Jin-Wook Shin
Affiliation:
sinjinwook@nate.com, Kwangwoon University, Electronic Materials Engineering, 139-701, Korea, Republic of
Won-Ju Cho
Affiliation:
chowj@kw.ac.kr, Kwangwoon University, Electronic Materials Engineering, 139-701, Korea, Republic of
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Abstract

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed the multi-layered SiC nanocrystals between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Hanafi, H. I., Tiwari, S., Khan, I., IEEE Trans. Electron Devices, 43, 1553 (1996).CrossRefGoogle Scholar
2 Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).CrossRefGoogle Scholar
3 Lee, D. U., Lee, M. S., Kim, J.-H., Kim, E. K., Koo, H.-M., Cho, W.-J., and Kim, W. M., Appl. Phys. Lett. 90, 093514 (2007).Google Scholar
4 Lee, M. S., Lee, D. U., Kim, J.-H., Kim, E. K., Kim, W. M., and Cho, W.-J., Jpn. J. Appl. Phys. 46, 6202 (2007).CrossRefGoogle Scholar
5 Chen, W.-R., Chang, T.-C., Liu, P.-T., Yeh, J.-L., Tu, C.-H., Lou, J.-C., Yeh, C.-F., and Chang, C.-Y., Appl. Phys. Lett. 91, 082103 (2007).Google Scholar
6 Liu, C.-W., Cheng, C.-L., Huang, S.-W., Jeng, J.-T., Shiau, S.-H., and Dai, B.-T., Appl. Phys. Lett. 91, 042107 (2007).Google Scholar
7 Koo, H.-M., Cho, W.-J., Lee, D. U., Kim, S. P., and Kim, E. K., Appl. Phys. Lett. 91, 043513 (2007).Google Scholar
8 Dufourcq, J., Bodnar, S., Gay, G., Lafond, D., Mur, P., Molas, G., Nieto, J. P., Vandroux, L., Jodin, L., Gustavo, F., and Baron, Th., Appl. Phys. Lett. 92, 073102 (2008).CrossRefGoogle Scholar
9 Zhu, Y., Li, B., and Liu, J., J. Appl. Phys. 101, 063702 (2007).Google Scholar
10 She, M. and King, T.-J., IEEE Trans. Electron Devices 50, 1934 (2003).Google Scholar
11 Guo, Y. P., Zheng, J. C., Wee, A. T. S., Huan, C. H. A., Li, K., Pan, J. S., Feng, Z.C., and Chua, S. J., Chem. Phys. Lett.339, 319 (2001).Google Scholar
12 Li, J.-J., Jia, S.-L., Du, X.-W., and Zhao, N.-Q., Surf. Coat. Technol. 201, 5408 (2007).CrossRefGoogle Scholar
13 Kulikovsky, V., Vorlicek, V., Bohac, P., Stranyanek, M., Ctvrlik, R., Kurdyumov, A., and Jastrabik, L., Surf. Coat. Technol. 202, 1738 (2008).CrossRefGoogle Scholar
14 Song, D., Cho, E.-C., Cho, Y.-H., Conibeer, G., Huang, Y., Huang, S., and Green, M. A., Thin Solid Films 516, 3824 (2008).CrossRefGoogle Scholar
15 Cho, W.-J., Ahn, C.-G., Im, K., Yang, J.-H., Oh, J., Baek, I.-B., and Lee, S., IEEE Electron Devices Lett. 25, 366 (2004).CrossRefGoogle Scholar
16 Lee, T. H., Lee, D. U., Kim, S. P., and Kim, E. K., Jpn. J. Appl. Phys. 47, 4992 (2008).CrossRefGoogle Scholar

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Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application
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