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The Morphology of the Polysilicon - SiO2 Interface
Published online by Cambridge University Press: 22 February 2011
Abstract
A systematic TEM study of the morphology of the polysilicon - SiO2 interface has been performed. LPCVD films were deposited on thermally oxidized silicon substrates, doped via diffusion or ion implantation, and oxidized in pyrogenic steam. Several aspects of the interface have been investigated as a function of dopant species, dopant concentration, oxidation time and oxidation temperature.
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- Copyright © Materials Research Society 1984