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Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy
Published online by Cambridge University Press: 01 February 2011
Abstract
GaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.
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- Copyright © Materials Research Society 2004