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Modification Effects in Argon Plasma Treated S1O2 Spin-On Glass

Published online by Cambridge University Press:  15 February 2011

Min Park
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Joong Whan Lee
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Jin Gun Koo
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Kyung Soo Kim
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Hyung Joun Yoo
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Kee Soo Nam
Affiliation:
Semiconductor Division, Electronics and Telecommunications Research Institute, Yusong-Gu, Taejon 305–350, Korea
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
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Abstract

We demonstrated that the quality of siloxane spin-on glass (SOG) films, widely used as interlevel planarization dielectrics, is improved significantly by curing in argon plasma. The wet etch rate of SOG film decreases with increasing plasma treatment temperature or treatment time, and is much lower than that cured in a furnace. Long-time plasma treatment reduces the density of silanols (Si-OH) and methyl (−CH3) group, which act as adsorption sites of water. The results were compared with those obtained from the N2O (or H2 ) plasma treated SOG films. The modification of the SOG film by Ar plasma is related to the radiation damage and the reconstruction of the atomic structure during the plasma exposure. The role of metastable Ar (Ar*) appears to be very important to improve the SOG film; SOG film is more relaxed by the energy released from the conversion of Ar* to Ar.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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