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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

Published online by Cambridge University Press:  15 February 2011

Shaohua Liu
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118
Peter Solomon
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118
R. Carpio
Affiliation:
SEMATECH, Austin, TX 78741
B. Fowler
Affiliation:
SEMATECH, Austin, TX 78741
D. Simmons
Affiliation:
SEMATECH, Austin, TX 78741
J. Wang
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265
R. Wise
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265
G. Imper
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054
N. B. Riley
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054
M. Moslehi
Affiliation:
CVC Products, Inc., Fremont, CA 94538
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, NJ 08540
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Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1] Gross, P., ”FT-IR Spectroscopy of Layered Structures-Thin Solid Films, Coated Substrates, Profiles, Multi-layers” SPIE Vol.1575, 169–179.Google Scholar
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