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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

Published online by Cambridge University Press:  15 February 2011


Shaohua Liu
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118
Peter Solomon
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118
R. Carpio
Affiliation:
SEMATECH, Austin, TX 78741
B. Fowler
Affiliation:
SEMATECH, Austin, TX 78741
D. Simmons
Affiliation:
SEMATECH, Austin, TX 78741
J. Wang
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265
R. Wise
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265
G. Imper
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054
N. B. Riley
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054
M. Moslehi
Affiliation:
CVC Products, Inc., Fremont, CA 94538
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, NJ 08540

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.


Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1] Gross, P., ”FT-IR Spectroscopy of Layered Structures-Thin Solid Films, Coated Substrates, Profiles, Multi-layers” SPIE Vol.1575, 169–179.Google Scholar
[2] Liu, S., Haigis, J., Ditaranto, M., Kinsella, K., Markham, J., Li, Q., Fenner, D.B., Solomon, P., Farquharson, S., and Morrison, P., ”Process Monitor and Control of Integrated Circuit Manufacturing Using FT-IR spectroscopy” Proceeding of AWMA/SPIE Meeting, Mc lean, VA, (Nov. 7–10, 1994)Google Scholar
[3] Carpio, R., Fowler, B., Simmons, D., Liu, S. and Solomon, P., ”A Comparison of Infrared Reflectance Spectroscopy and Spectroscopic Ellipsometry for Polysilicon Film Process Control”, Proceeding of Electro-Chemical Society, Miami Beach, FL, Oct. 9–14, 1994 Google Scholar
[4] Fowler, B., Simmons, D., Carpio, R., Liu, S., and Solomon, P., ”The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflectance Spectroscopy” Proceeding of Electro-Chemical Society, Vol.94–33, pg. 254, Miami Beach, FL, Oct. 9-14, 1994 Google Scholar
[5] Liu, S., et. al., patent pending.Google Scholar
[6] Trade Mark of Applied Materials, Inc.Google Scholar
[7] Wang, C. J., Wise, R., Liu, S., Haigis, J., Farquharson, S., and Fowler, B., ”In-line FT-IR for Epitaxial Silicon Film Thickness Measurement on An Applied Materials Centura Cluster Tool” Proceeding of Annual Semiconductor Manufacture Conference, Boston, MA, Nov. 14–17, 1994 Google Scholar

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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor
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