Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

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MRS Online Proceedings Library Archive , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 87

DOI: https://doi.org/10.1557/PROC-387-87

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References

[1] Gross, P., ”FT-IR Spectroscopy of Layered Structures-Thin Solid Films, Coated Substrates, Profiles, Multi-layers” SPIE Vol.1575, 169–179.Google Scholar

[2] Liu, S., Haigis, J., Ditaranto, M., Kinsella, K., Markham, J., Li, Q., Fenner, D.B., Solomon, P., Farquharson, S., and Morrison, P., ”Process Monitor and Control of Integrated Circuit Manufacturing Using FT-IR spectroscopy” Proceeding of AWMA/SPIE Meeting, Mc lean, VA, (Nov. 7–10, 1994)Google Scholar

[3] Carpio, R., Fowler, B., Simmons, D., Liu, S. and Solomon, P., ”A Comparison of Infrared Reflectance Spectroscopy and Spectroscopic Ellipsometry for Polysilicon Film Process Control”, Proceeding of Electro-Chemical Society, Miami Beach, FL, Oct. 9–14, 1994 Google Scholar

[4] Fowler, B., Simmons, D., Carpio, R., Liu, S., and Solomon, P., ”The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflectance Spectroscopy” Proceeding of Electro-Chemical Society, Vol.94–33, pg. 254, Miami Beach, FL, Oct. 9-14, 1994 Google Scholar

[5] Liu, S., et. al., patent pending.Google Scholar

[6] Trade Mark of Applied Materials, Inc.Google Scholar

[7] Wang, C. J., Wise, R., Liu, S., Haigis, J., Farquharson, S., and Fowler, B., ”In-line FT-IR for Epitaxial Silicon Film Thickness Measurement on An Applied Materials Centura Cluster Tool” Proceeding of Annual Semiconductor Manufacture Conference, Boston, MA, Nov. 14–17, 1994 Google Scholar

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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

Volume 387
Shaohua Liu ^(a1), Peter Solomon ^(a1), R. Carpio ^(a2), B. Fowler ^(a2), D. Simmons ^(a2), J. Wang ^(a3), R. Wise ^(a3), G. Imper ^(a4), N. B. Riley ^(a4), M. Moslehi ^(a5) and N. M. Ravindra ^(a6)
DOI: https://doi.org/10.1557/PROC-387-87

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Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

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