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MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

Published online by Cambridge University Press:  10 February 2011


Baolin Zhang
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China
Tianming Zhou
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China
Hong Jiang
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China
Yongqiang Ning
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China
Shuwei Li
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China
Yixin Jin
Affiliation:
Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China

Abstract

Quaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.


Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions
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